df005s thru df10s vishay general semiconductor document number: 88573 revision: 30-jan-08 for technical questions within your r egion, please contact one of the following: pdd-americas@vishay.com , pdd-asia@vishay.com , pdd-europe@vishay.com www.vishay.com 1 miniature glass passivated single-phase surface mount bridge rectifiers features ? ul recognition, file number e54214 ? ideal for automated placement ? high surge current capability ? meets msl level 1, per j-std-020, lf maximum peak of 250 c ? solder dip 260 c, 40 s ? component in accordance to rohs 2002/95/ec and weee 2002/96/ec typical applications general purpose use in ac-to-dc bridge full wave rectification for smps, lig hting ballaster, adapter, battery charger, home appliances, office equipment, and telecommunication applications. mechanical data case: DFS epoxy meets ul 94v-0 flammability rating terminals: matte tin plated leads, solderable per j-std-002 and jesd22-b102 e3 suffix for consumer grade, meets jesd 201 class 1a whisker test polarity: as marked on body primary characteristics i f(av) 1 a v rrm 50 v to 1000 v i fsm 50 a i r 5 a v f 1.1 v t j max. 150 c case style DFS ~ ~ ~ ~ note: (1) units mounted on p.c.b. with 0.51 x 0.51" (13 x 13 mm) copper pads maximum ratings (t a = 25 c unless otherwise noted) parameter symbol df005s df01s df02s df04s df06s df08s df10s unit device marking code df005s df01s df02s df04s df06s df08s df10s maximum repetitive peak reverse voltage v rrm 50 100 200 400 600 800 1000 v maximum rms voltage v rms 35 70 140 280 420 560 700 v maximum dc blocking voltage v dc 50 100 200 400 600 800 1000 v maximum average forward output rectified current at t a = 40 c (1) i f(av) 1.0 a peak forward surge current single half sine-wave superimposed on rated load i fsm 50 a rating for fusing (t < 8.3 ms) i 2 t 10 a 2 s operating junction and storage temperature range t j , t stg - 55 to + 150 c
df005s thru df10s vishay general semiconductor www.vishay.com for technical questions within your region, please contact one of the following: pdd-americas@vishay.com , pdd-asia@vishay.com , pdd-europe@vishay.com document number: 88573 revision: 30-jan-08 2 note: (1) measured at 1.0 mhz and applied reverse voltage of 4.0 v note: (1) units mounted on p.c.b. with 0.51 x 0.51" (13 x 13 mm) copper pads ratings and characteristics curves (t a = 25 c unless otherwise noted) electrical characteristics (t a = 25 c unless otherwise noted) parameter test conditions symbol df005s df01s df02s df04s df06s df08s df10s unit maximum instantaneous forward voltage drop per diode 1.0 a v f 1.1 v maximum dc reverse current at rated dc blocking voltage per diode t a = 25 c t a = 125 c i r 5.0 500 a typical junction capacitance per diode (1) c j 25 pf thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol df005s df01s df02s df04s df06s df08s df10s unit typical thermal resistance (1) r ja r jl 40 15 c/w ordering information (example) preferred p/n unit weight (g) preferred package code base quantity delivery mode df06s-e3/45 0.399 45 50 tube df06s-e3/77 0.399 77 1500 13" diameter paper tape and reel figure 1. derating curve output rectified current 20 40 60 8 0 100 120 140 160 0 0.5 1.0 am b ient temperat u re (c) a v erage for w ard o u tp u t c u rrent (a) 60 hz resisti v e or ind u cti v e load p.c.b. mo u nted on 0.51 x 0.51" (13 x 13 mm) copper pads figure 2. maximum non-repetitive peak forward surge current per diode 1 10 100 0 10 20 30 40 50 60 nu m b er of cycles at 60 hz peak for w ard s u rge c u rrent (a) t j = 150 c single sine- w a v e 1.0 cycle
df005s thru df10s vishay general semiconductor document number: 88573 revision: 30-jan-08 for technical questions within your r egion, please contact one of the following: pdd-americas@vishay.com , pdd-asia@vishay.com , pdd-europe@vishay.com www.vishay.com 3 package outline dimensions in inches (millimeters) figure 3. typical forward characteristics per diode figure 4. typical reverse leak age characteristics per diode 0.4 0.6 0. 8 1.0 1.2 1.4 0.01 0.1 1 10 instantaneo u s for w ard v oltage ( v ) instantaneo u s for w ard c u rrent (a) t j = 25 c p u lse w idth = 300 s 1 % d u ty cycle 0 20 40 60 8 0 100 0.01 0.1 1 10 100 t j = 125 c t j = 50 c percent of rated peak re v erse v oltage (%) instantaneo u s re v erse c u rrent ( a) figure 5. typical juncti on capacitance per diode figure 6. typical transient thermal impedance 1 10 100 1 10 100 re v erse v oltage ( v ) j u nction capacitance (pf) t j = 25 c f = 1.0 mhz v sig = 50 m v p-p 0.01 0.1 1 10 100 0.1 1 10 100 t - heating time (s) transient thermal impedance (c/ w ) mountin g pad la yout 0.255 (6.5) 0.245 (6.2) 0.013 (0.330) 0.009 (0.241) 0.060 (1.524) 0.040 (1.016) 0.404 (10.3) 0.013 (0.330) 0.003 (0.076) 0.047 (1.20) 0.040 (1.02) 0.205 (5.2) 0.195 (5.0) 0.335 ( 8 .51) 0.320 ( 8 .13) 0.130 (3.3) 0.120 (3.05) 45 0.3 8 6 (9. 8 0) case style DFS 0.404 max. (10.26 max.) 0.205 (5.2) 0.195 (5.0) 0.047 mi n . (1.20 mi n .) 0.060 mi n . (1.52 mi n .)
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